169 research outputs found

    The impact of lake shape and size on lake breezes and air-lake exchanges on Titan

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    Titan, the largest moon of Saturn, has many lakes on its surface, formed mainly of liquid methane. Like water lakes on Earth, these methane lakes on Titan likely profoundly affect the local climate. Previous studies (Rafkin and Soto 2020, Chatain et al 2022) showed that Titan's lakes create lake breeze circulations with characteristic dimensions similar to the ones observed on Earth. However, such studies used a model in two dimensions; this work investigates the consequences of the addition of a third dimension to the model. Our results show that 2D simulations tend to overestimate the extension of the lake breeze over the land, and underestimate the strength of the subsidence over the lake, due to divergence/convergence geometrical effects in the mass conservation equations. In addition, 3D simulations including a large scale background wind show the formation of a pocket of accelerated wind behind the lake, which did not form in 2D simulations. An investigation of the effect of shoreline concavity on the resulting air circulation shows the formation of wind currents over peninsulas. Simulations with several lakes can either result in the formation of several individual lake breeze cells (during the day), or the emergence of a large merged cell with internal wind currents between lakes (during the night). Simulations of several real-shaped lakes located at a latitude of 74{\deg}N on Titan at the spring equinox show that larger lakes trigger stronger winds, and that some sections of lakes might accumulate enough methane vapor to form a thin fog. The addition of a third dimension, along with adjustments in the parametrizations of turbulence and subsurface land temperature, results in a reduction in the magnitude of the average lake evaporate rate, namely to ~6 cm/Earth year.Comment: Submitted to Icarus on 2023-07-21. Dataset available at the DOI: 10.5281/zenodo.817227

    Transformation of spin information into large electrical signals via carbon nanotubes

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    Spin electronics (spintronics) exploits the magnetic nature of the electron, and is commercially exploited in the spin valves of disc-drive read heads. There is currently widespread interest in using industrially relevant semiconductors in new types of spintronic devices based on the manipulation of spins injected into a semiconducting channel between a spin-polarized source and drain. However, the transformation of spin information into large electrical signals is limited by spin relaxation such that the magnetoresistive signals are below 1%. We overcome this long standing problem in spintronics by demonstrating large magnetoresistance effects of 61% at 5 K in devices where the non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 micron gap between epitaxial electrodes of the highly spin polarized manganite La0.7Sr0.3MnO3. This improvement arises because the spin lifetime in nanotubes is long due the small spin-orbit coupling of carbon, because the high nanotube Fermi velocity permits the carrier dwell time to not significantly exceed this spin lifetime, because the manganite remains highly spin polarized up to the manganite-nanotube interface, and because the interfacial barrier is of an appropriate height. We support these latter statements regarding the interface using density functional theory calculations. The success of our experiments with such chemically and geometrically different materials should inspire adventure in materials selection for some future spintronicsComment: Content highly modified. New title, text, conclusions, figures and references. New author include

    Electric-field controlled spin reversal in a quantum dot with ferromagnetic contacts

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    Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as well as for solid-state qubits. An electrically gated quantum dot in the Coulomb blockade regime can be tuned to hold a single unpaired spin-1/2, which is routinely spin-polarized by an applied magnetic field. Using ferromagnetic electrodes, however, the properties of the quantum dot become directly spin-dependent and it has been demonstrated that the ferromagnetic electrodes induce a local exchange-field which polarizes the localized spin in the absence of any external fields. Here we report on the experimental realization of this tunneling-induced spin-splitting in a carbon nanotube quantum dot coupled to ferromagnetic nickel-electrodes. We study the intermediate coupling regime in which single-electron states remain well defined, but with sufficiently good tunnel-contacts to give rise to a sizable exchange-field. Since charge transport in this regime is dominated by the Kondo-effect, we can utilize this sharp many-body resonance to read off the local spin-polarization from the measured bias-spectroscopy. We show that the exchange-field can be compensated by an external magnetic field, thus restoring a zero-bias Kondo-resonance, and we demonstrate that the exchange-field itself, and hence the local spin-polarization, can be tuned and reversed merely by tuning the gate-voltage. This demonstrates a very direct electrical control over the spin-state of a quantum dot which, in contrast to an applied magnetic field, allows for rapid spin-reversal with a very localized addressing.Comment: 19 pages, 11 figure

    Tunable Sign Change of Spin Hall Magnetoresistance in Pt/NiO/YIG Structures

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    Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO “spin flop” coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of magnetic structure in antiferromagnets for transport of pure spin current in multilayers

    Unravelling the role of the interface for spin injection into organic semiconductors

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    Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.Comment: Original version. Revised version to appear in Nature Physics

    Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves

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    The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias-and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET

    Soil fungal abundance and plant functional traits drive fertile island formation in global drylands

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    Dryland vegetation is characterized by discrete plant patches that accumulate and capture soil resources under their canopies. These “fertile islands” are major drivers of dryland ecosystem structure and functioning, yet we lack an integrated understanding of the factors controlling their magnitude and variability at the global scale.EEA BarilocheFil: Ochoa-Hueso, RaĂșl. Universidad AutĂłnoma de Madrid. Department of Ecology; EspañaFil: Eldridge, David J. University of New South Wales. School of Biological, Earth and Environmental Sciences; AustraliaFil: Delgado-Baquerizo, Manuel. University of Colorado. Cooperative Institute for Research in Environmental Sciences; Estados Unidos. Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y TecnologĂ­a. Departamento de BiologĂ­a y GeologĂ­a, FĂ­sica y QuĂ­mica InorgĂĄnica; EspañaFil: Soliveres, Santiago. University of Bern. Institute of Plant Sciences; SuizaFil: Bowker, Matthew A. Northern Arizona University. School of Forestry; Estados UnidosFil: Gross, NicolĂĄs. Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y TecnologĂ­a. Departamento de BiologĂ­a y GeologĂ­a, FĂ­sica y QuĂ­mica InorgĂĄnica; España. Institut Nationale de la Recherche Agronomique; Francia. UniversitĂ© La Rochelle. Centre d’étude biologique de ChizĂ©; FranciaFil: Le Bagousse-Pinguet, Yoann. Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y TecnologĂ­a. Departamento de BiologĂ­a y GeologĂ­a, FĂ­sica y QuĂ­mica InorgĂĄnica; EspañaFil: Quero, JosĂ© L. Universidad de CĂłrdoba. Escuela TĂ©cnica Superior de IngenierĂ­a AgronĂłmica y de Montes. Departamento de IngenierĂ­a Forestal: EspañaFil: GarcĂ­a-GĂłmez, Miguel. Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y TecnologĂ­a. Departamento de BiologĂ­a y GeologĂ­a, FĂ­sica y QuĂ­mica InorgĂĄnica; EspañaFil: Valencia, Enrique. Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y TecnologĂ­a. Departamento de BiologĂ­a y GeologĂ­a, FĂ­sica y QuĂ­mica InorgĂĄnica; EspañaFil: Arredondo, Tulio. Instituto Potosino de InvestigaciĂłn CientĂ­fica y TecnolĂłgica. DivisiĂłn de Ciencias Ambientales; MĂ©xicoFil: Beinticinco, Laura. Universidad Nacional de La Pampa. Facultad de AgronomĂ­a; ArgentinaFil: Bran, Donaldo Eduardo. Instituto Nacional de TecnologĂ­a Agropecuaria (INTA). EstaciĂłn Experimental Agropecuaria Bariloche; ArgentinaFil: Cea, Alex. Universidad de La Serena. Departamento de BiologĂ­a; ChileFil: Coaguila, Daniel. Instituto de Ensino Superior de Rio Verde; BrasilFil: Dougill, Andrew J. University of Leeds. School of Earth and Environment; Gran BretañaFil: Espinosa, Carlos I. Universidad TĂ©cnica Particular de Loja. Departamento de Ciencias Naturales; EcuadorFil: Gaitan, Juan Jose. Instituto Nacional de TecnologĂ­a Agropecuaria (INTA). Instituto de Suelos; ArgentinaFil: Guuroh, Reginald T. University of Cologne. Botanical Institute. Range Ecology and Range Management Group; Alemania. CSIR-Forestry Research Institute of Ghana; GhanaFil: GuzmĂĄn, Elizabeth. Universidad TĂ©cnica Particular de Loja. Departamento de Ciencias Naturales; EcuadorFil: GutiĂ©rrez, Julio R.. Universidad de La Serena. Departamento de BiologĂ­a; Chile. Centro de Estudios Avanzados en Zonas Áridas (CEAZA); Chile. Instituto de EcologĂ­a y Biodiversidad; ChileFil: HernĂĄndez, Rosa M. Universidad Experimental SimĂłn RodrĂ­guez. Centro de AgroecologĂ­a Tropical. Laboratorio de BiogeoquĂ­mica; VenezuelaFil: Huber-Sannwald, Elisabeth. Instituto Potosino de InvestigaciĂłn CientĂ­fica y TecnolĂłgica. DivisiĂłn de Ciencias Ambientales; MĂ©xicoFil: Jeffries, Thomas. Western Sydney University. Hawkesbury Institute for the Environment; AustraliaFil: LinstĂ€dter, Anja. University of Cologne. Botanical Institute. Range Ecology and Range Management Group; AlemaniaFil: Mau, Rebecca L. Northern Arizona University. Center for Ecosystem Science and Society: Estados UnidosFil: Monerris, Jorge. UniversitĂ© du QuĂ©bec Ă  MontrĂ©al. Pavillon des Sciences Biologiques. DĂ©partement des Sciences Biologiques; CanadĂĄFil: Prina, Anibal. Universidad Nacional de La Pampa. Facultad de AgronomĂ­a; ArgentinaFil: Pucheta, Eduardo. Universidad Nacional de San Juan. Facultad de Ciencias Exactas, FĂ­sicas y Naturales. Departamento de BiologĂ­a; ArgentinaFil: Stavi, Ilan. Dead Sea and Arava Science Center, IsraelFil: Thomas, Andrew. Aberystwyth University. Department of Geography and Earth Sciences; Gran BretañaFil: Zaady, Eli. Agricultural Research Organization. Gilat Research Center. Natural Resources; IsraelFil: Singh, Brajesh K. Western Sydney University. Hawkesbury Institute for the Environment; Australia. Western Sydney University. Global Centre for Land-Based Innovation; AustraliaFil: Maestre, Fernando T. Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y TecnologĂ­a. Departamento de BiologĂ­a y GeologĂ­a, FĂ­sica y QuĂ­mica InorgĂĄnica; Españ

    Soil fungal abundance and plant functional traits drive fertile island formation in global drylands

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    International audience1.Dryland vegetation is characterised by discrete plant patches that accumulate and capture soil resources under their canopies. These “fertile islands” are major drivers of dryland ecosystem structure and functioning, yet we lack an integrated understanding of the factors controlling their magnitude and variability at the global scale.2.We conducted a standardized field survey across two hundred and thirty-six drylands from five continents. At each site, we measured the composition, diversity and cover of perennial plants. Fertile island effects were estimated at each site by comparing composite soil samples obtained under the canopy of the dominant plants and in open areas devoid of perennial vegetation. For each sample, we measured fifteen soil variables (functions) associated with carbon, nitrogen and phosphorus cycling and used the Relative Interaction Index to quantify the magnitude of the fertile island effect for each function. In eighty sites, we also measured fungal and bacterial abundance (quantitative PCR) and diversity (Illumina MiSeq).3.The most fertile islands, i.e. those where a higher number of functions were simultaneously enhanced, were found at lower-elevation sites with greater soil pH values and sand content under semiarid climates, particularly at locations where the presence of tall woody species with a low specific leaf area increased fungal abundance beneath plant canopies, the main direct biotic controller of the fertile island effect in the drylands studied. Positive effects of fungal abundance were particularly associated with greater nutrient contents and microbial activity (soil extracellular enzymes) under plant canopies.4.Synthesis. Our results show that the formation of fertile islands in global drylands largely depends on: (i) local climatic, topographic and edaphic characteristics, (ii) the structure and traits of local plant communities and (iii) soil microbial communities. Our study also has broad implications for the management and restoration of dryland ecosystems worldwide, where woody plants are commonly used as nurse plants to enhance the establishment and survival of beneficiary species. Finally, our results suggest that forecasted increases in aridity may enhance the formation of fertile islands in drylands worldwide

    First-Principles Study of the Electronic and Magnetic Properties of Defects in Carbon Nanostructures

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    Understanding the magnetic properties of graphenic nanostructures is instrumental in future spintronics applications. These magnetic properties are known to depend crucially on the presence of defects. Here we review our recent theoretical studies using density functional calculations on two types of defects in carbon nanostructures: Substitutional doping with transition metals, and sp3^3-type defects created by covalent functionalization with organic and inorganic molecules. We focus on such defects because they can be used to create and control magnetism in graphene-based materials. Our main results are summarized as follows: i)Substitutional metal impurities are fully understood using a model based on the hybridization between the dd states of the metal atom and the defect levels associated with an unreconstructed D3h_{3h} carbon vacancy. We identify three different regimes, associated with the occupation of distinct hybridization levels, which determine the magnetic properties obtained with this type of doping; ii) A spin moment of 1.0 ÎŒB\mu_B is always induced by chemical functionalization when a molecule chemisorbs on a graphene layer via a single C-C (or other weakly polar) covalent bond. The magnetic coupling between adsorbates shows a key dependence on the sublattice adsorption site. This effect is similar to that of H adsorption, however, with universal character; iii) The spin moment of substitutional metal impurities can be controlled using strain. In particular, we show that although Ni substitutionals are non-magnetic in flat and unstrained graphene, the magnetism of these defects can be activated by applying either uniaxial strain or curvature to the graphene layer. All these results provide key information about formation and control of defect-induced magnetism in graphene and related materials.Comment: 40 pages, 17 Figures, 62 References; Chapter 2 in Topological Modelling of Nanostructures and Extended Systems (2013) - Springer, edited by A. R. Ashrafi, F. Cataldo, A. Iranmanesh, and O. Or
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